CHICAGO--(BUSINESS WIRE)--Littelfuse, Inc., the global leader in circuit protection, has added a series of silicon Schottky devices designed for ultra-low forward voltage drop (V F) to its rapidly ...

Microsemi Corporation, a leading manufacturer of discrete semiconductors and power-management integrated circuits, announced the expansion of its line of enhanced SOT-227 Schottky diode power modules ...

Nexperia has extended its trench Schottky rectifier range with devices rated at up to 100V and 20A in the company’s ‘CFP’ packages with an internal copper clip (right), intended to have smaller ...

Philips Semiconductor introduces the planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an integrated guard ring for stress protection, encapsulated in a SOD323F ...

Vishay Intertechnology, Inc. expanded its offering of TMBS Trench MOS Barrier Schottky rectifiers with 12 new 45 V devices in three power package options that feature a wide range of current ratings ...

The first Schottky barrier rectifiers based on Trench MOS technology can be used in rectification circuits or as OR-ing diodes in redundant switchmode power supplies. The five devices feature low ...

Solid State Devices claims its 200V Schottky rectifiers are the highest voltage silicon Schottky devices currently on the market. Hermetically sealed, the devices are available in single die or dual ...

Diodes Incorporated has announced the first devices in a family of Super Barrier Rectifiers (SBR) designed for automotive applications. The company claims the devices have a lower forward voltage drop ...